Method for reduced N+ diffusion in strained Si on SiGe...

Details Method for reduced N+ diffusion in strained Si on SiGe... Method for reduced N+ diffusion in strained Si on SiGe...

2007-11-20

2007-11-20

Pham, Long (Department: 2814)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S199000

Reexamination Certificate

active

11283882

ABSTRACT:
Method for manufacturing a semiconductor device. The method includes forming source and drain extension regions in an upper surface of a SiGe-based substrate. The source and drain extension regions contain an N type impurity. Reducing vacancy concentration in the source and drain extension regions to decrease diffusion of the N type impurity contained in the first source and drain extension regions.

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