Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2007-06-12
2007-06-12
Le, Thao X. (Department: 2814)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S622000
Reexamination Certificate
active
10135393
ABSTRACT:
The object of the present invention is to improve the interfacial adhesion between the film with low dielectric constant and protective film, without damaging the excellent dielectric, flatness and gap-filling characteristics of the organic material of low dielectric constant, and for that purpose there is provided a wiring structure with the copper film embedded in the insulation film of the wiring layer, wherein the insulation film of the wiring layer is of a multi-layered structure with the laminated methyl silisesquioxane (MSQ) film, methylated hydrogen silisesquioxane (MHSQ) film and silicon oxide film.
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Wen-Chang Chen et al., Effect of Slurry formulations on chemical-mechanical polishing of low dielectric constant polysioxanes: Hydrido-organo siloxane and methyl silsesquioxane, Jan./Feb. 2000, J. Vac. Sci. Techno. B 18(1), 201-207.
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Le Thao X.
McGinn IP Law Group PLLC
NEC Electronics Corporation
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