Semiconductor device and method of manufacturing the same

Details Semiconductor device and method of manufacturing the same Semiconductor device and method of manufacturing the same

2007-12-25

2007-12-25

Chaudhari, Chandra (Department: 2891)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C257SE21649

Reexamination Certificate

active

11193788

ABSTRACT:
A semiconductor device includes a word line structure that extends in a first direction on an active region defined on a substrate. First and second contact pads are formed on the active region at both sides of the word line structure. Bit line structures are electrically connected to the first contact pad and extend in a second direction substantially perpendicular to the first direction. An insulation layer structure is formed on the substrate having the bit line structures. A storage node contact plug is electrically connected to the second contact pad through the insulation layer structure. A storage node electrode, which may be part of a capacitor, is formed on the storage node contact plug. The storage node contact plug has a lower portion and an upper portion having a width wider than that of the lower portion, with vertical sides perpendicular to the first and second directions.

REFERENCES:
patent: 5858831 (1999-01-01), Sung
patent: 6479341 (2002-11-01), Lu
patent: 6528368 (2003-03-01), Park
patent: 2001-0068379 (2001-07-01), None
patent: 2002-0045657 (2002-06-01), None
patent: 2002-0058341 (2002-07-01), None
English language abstract of the Korean Publication No. 2002-0045657.
English language abstract of the Korean Publication No. 2002-0058341.
English language abstract for Korean Publication No. 2001-0068379.

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