Method for forming a MIM capacitor in a semiconductor device

Details Method for forming a MIM capacitor in a semiconductor device Method for forming a MIM capacitor in a semiconductor device

2007-12-25

2007-12-25

Tsai, H. Jey (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S253000, C438S393000, C257SE27048

Reexamination Certificate

active

11316631

ABSTRACT:
In a method of forming a metal-insulator-metal (MIM) capacitor in a semiconductor device, after forming a capacitor insulation layer on a lower metal layer of the MIM capacitor, an upper electrode is formed by ion implantation into the capacitor insulation layer and silicidation, without a typical reactive ion etching process. Consequently, damage to the capacitor insulation layer can be minimized, and the area of the capacitor need not increase.

REFERENCES:
patent: 5686329 (1997-11-01), Chang et al.

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