Trench-gate semiconductor device and method of manufacturing

Details Trench-gate semiconductor device and method of manufacturing Trench-gate semiconductor device and method of manufacturing

2007-06-19

2007-06-19

Chaudhari, Chandra (Department: 2891)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S589000, C257SE21419

Reexamination Certificate

active

10515749

ABSTRACT:
Consistent with an example embodiment a trench-gate semiconductor device, for example a MOSFET or IGBT, having a field plate provided below the trenched gate is manufactured using a process with improved reproducibility. The process includes the steps of etching a first grove into the semiconductor body for receiving the gate, and etching a second groove into the top major surface of the semiconductor body, the second groove extending from the first groove and being narrower than the first groove. The invention enables better control of the vertical extent of the gate below the top major surface of the semiconductor body.

REFERENCES:
patent: 4914058 (1990-04-01), Blanchard
patent: 5108783 (1992-04-01), Tanigawa et al.
patent: 5998833 (1999-12-01), Baliga
patent: 6175225 (2001-01-01), De Groot
patent: 6433385 (2002-08-01), Kocon et al.
patent: 100 38 177 (2002-02-01), None
patent: 1 170 803 (2002-01-01), None

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