Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2007-02-20
2007-02-20
Owens, Douglas W. (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S296000
Reexamination Certificate
active
10676865
ABSTRACT:
Embodiments of the invention provide flat-type capacitors that prevent degradation of the dielectric layer, thereby improving the electrical properties of the capacitor. The capacitor includes a lower interconnection formed in a predetermined portion of a semiconductor substrate, a lower electrode formed on the lower interconnection that is electrically coupled to the lower interconnection; a concave dielectric layer formed on the lower electrode; a concave upper electrode formed on the dielectric layer; a first upper interconnection that is electrically coupled to the lower interconnection; and a second upper interconnection that is coupled to the upper electrode. The concave upper electrode is larger than the lower electrode.
REFERENCES:
patent: 6271596 (2001-08-01), Alers
patent: 6472754 (2002-10-01), Nakajima et al.
patent: 2004/0084709 (2004-05-01), Kim et al.
patent: 2000-228497 (2000-08-01), None
patent: 2001-308287 (2001-01-01), None
English Language of Abstract for Japanese Patent Publication No. JP2001-308287, filed Jan. 11, 2001.
English Language of Abstract for Japanese Patent Publication No. JP9162369, Jun. 20, 1997.
English Language of Abstract for Japanese Patent Publication No. 2000-228497.
Marger & Johnson & McCollom, P.C.
Owens Douglas W.
Samsung Electronics Co,. Ltd.
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