MOS transistor and method of manufacturing the same

Details MOS transistor and method of manufacturing the same MOS transistor and method of manufacturing the same

2007-01-09

2007-01-09

Lee, Hsien-Ming (Department: 2823)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S302000, C438S303000, C438S305000, C438S306000, C257S327000, C257S345000

Reexamination Certificate

active

11023104

ABSTRACT:
A metal oxide semiconductor (MOS) transistor and a method of manufacturing the same are disclosed. An example MOS transistor includes a semiconductor substrate of a first conductivity type where an active region is defined, a gate insulating layer pattern and a gate formed on the active region of the substrate, a spacer formed on side walls of the gate, and source/drain extension regions of a second conductivity type formed within the substrate at both sides of the gate. The example MOS transistor further includes source/drain regions of the second conductivity type formed within the substrate at both side of the spacer and punch-through suppression regions of the first conductivity type formed within the active of the substrate. The punch-through suppression regions surround the source/drain extension regions and the source/drain regions under the gate.

REFERENCES:
patent: 5320974 (1994-06-01), Hori et al.
patent: 6690060 (2004-02-01), Horiuchi et al.
patent: 62051216 (1987-03-01), None

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