Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2007-02-20
2007-02-20
Whitehead, Jr., Carl (Department: 2813)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C257S774000
Reexamination Certificate
active
10795366
ABSTRACT:
In a method of forming contact holes without using a vacuum device, a resist film at positions corresponding to contact hole forming regions above a source region16, a drain region18and a gate electrode34of a polysilicon film14, is exposed and developed to form mask pillars40. Then a liquid insulating material is applied onto the whole surface of a glass substrate10except for the mask pillars40, to form an insulating layer42. Next the mask pillars40are removed by ashing, and an insulating layer42, second contact holes44and first contact holes28which pass through a gate insulating film26are formed.
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Sato Mitsuru
Yudasaka Ichio
Jr. Carl Whitehead
Oliff & Berridg,e PLC
Rodgers Colleen E.
Seiko Epson Corporation
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