Static information storage and retrieval – Read/write circuit – Precharge
Reexamination Certificate
2007-07-10
2007-07-10
Ho, Hoai V. (Department: 2827)
Static information storage and retrieval
Read/write circuit
Precharge
C365S154000, C365S226000
Reexamination Certificate
active
11123484
ABSTRACT:
An integrated circuit memory includes a plurality of memory cells, where each of the plurality of memory cells comprises a first storage node and a second storage node. Each of the plurality of memory cells comprises a transistor coupled between the first and second storage nodes and responsive to an equalization signal. An equalization control circuit provides the equalization signal to selected memory cells of the plurality of memory cells. The equalization control circuit is for equalizing a voltage between the first and second storage nodes to enable to a write operation of the selected memory cells. During the write operation a data signal is provided to a first bit line that swings between a logic high voltage equal to a power supply voltage and a logic low voltage equal to ground potential. The transistor and the equalization control circuit enables reliable memory operation at low power supply voltages.
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Kenkare Prashant U.
Pelley Perry H.
Ramaraju Ravindraraj
Clingan, Jr. James L.
Freescale Semiconductor Inc.
Hill Daniel D.
Ho Hoai V.
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