GaN LED with solderable backside metal

Details GaN LED with solderable backside metal GaN LED with solderable backside metal

2007-03-13

2007-03-13

Dickey, Thomas L. (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

With particular semiconductor material

C257S762000, C257SE33062

Reexamination Certificate

active

10874104

ABSTRACT:
A light-emitting element (24) is disclosed. A light emitting diode (LED) includes a sapphire substrate (26) having front and back sides (33, 35), and a plurality of semiconductor layers (28, 30, 32) deposited on the front side (33) of the sapphire substrate (26). The semiconductor layers (28, 30, 32) define a light-emitting structure that emits light responsive to an electrical input. A metallization stack (40) includes an adhesion layer (34) deposited on the back side (35) of the sapphire substrate (26), and a solderable layer (38) connected to the adhesion layer (34) such that the solderable layer (38) is secured to the sapphire substrate (26) by the adhesion layer (34). A support structure (42) is provided on which the LED is disposed. A solder bond (44) is arranged between the LED and the support structure (42). The solder bond (44) secures the LED to the support structure (42).

REFERENCES:
patent: 4829321 (1989-05-01), Iizuka et al.
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patent: 5939735 (1999-08-01), Tsutsui et al.
patent: 6147403 (2000-11-01), Matschitsch et al.
patent: 6326638 (2001-12-01), Kamiyama et al.
patent: 2001/0004534 (2001-06-01), Carter-Coman et al.
patent: 2002/0123164 (2002-09-01), Slater et al.

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