Radiation imagery chemistry: process – composition – or product th – Imaging affecting physical property of radiation sensitive... – Radiation sensitive composition or product or process of making
Reexamination Certificate
2007-05-01
2007-05-01
Le, Hoa Van (Department: 1752)
Radiation imagery chemistry: process, composition, or product th
Imaging affecting physical property of radiation sensitive...
Radiation sensitive composition or product or process of making
C430S281100
Reexamination Certificate
active
11373925
ABSTRACT:
A high resolution resist material comprising an acid generator is provided so that high sensitivity and high resolution for high energy rays of 300 nm or less, small line-edge roughness, and excellence in heat stability and storage stability are obtained. Moreover, a pattern formation method using this resist material are provided. Specifically, a novel compound of the following general formula (1); and a positive resist material comprising this compound preferably as a photo acid generator, and a base resin; are provided. This positive resist material may contain a basic compound or a dissolution inhibitor. Further, the present invention provides a pattern formation method comprising the steps of applying this positive resist material on a substrate, then heat-treating the material, exposing the treated material to a high energy ray having a wavelength of 300 nm or less via a photo mask, optionally heat-treating the exposed material, and developing the material using a developer
REFERENCES:
patent: 5585507 (1996-12-01), Nakano et al.
patent: 5635332 (1997-06-01), Nakano et al.
patent: 6440634 (2002-08-01), Ohsawa et al.
patent: 2004/0072097 (2004-04-01), Kodama
patent: 2102421 (1983-02-01), None
patent: 8027102/96 (1996-01-01), None
patent: 10319581/98 (1998-12-01), None
patent: 2000-292917 (2000-10-01), None
Azuma, T., et al. “Line edge roughness of chemically amplified resists.”Advances in Resist Technology and Processing XVII3999:264-269 (2000).
Abstract of US 20040072097 on pp. 2-5 of Search Report on Nov. 30, 2005.
Oximes of dialkyl- and alkyleneacetonylsulfonium bromides. Krivenchuk, V.E. Pestis. Polim. Plast. Mass., Kiev, USSR Khimoko-Farmatsevticheski Zhumal (1970), 4(10), 18-22.
Kobayashi Katsuhiro
Kobayashi Tomohiro
Nishi Tsunehiro
Ohsawa Youichi
Watanabe Satoshi
Le Hoa Van
Myers Bigel Sibley & Sajovec P.A.
Shin-Etsu Chemical Co. , Ltd.
LandOfFree
Photo acid generator, chemical amplification resist material does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Photo acid generator, chemical amplification resist material, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Photo acid generator, chemical amplification resist material will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3801933