Method of forming a coupling dielectric Ta 2 O 5 in a...

Details Method of forming a coupling dielectric Ta 2 O 5 in a... Method of forming a coupling dielectric Ta 2 O 5 in a...

2007-07-10

2007-07-10

Nguyen, Thanh (Department: 2813)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S003000, C438S104000, C438S240000

Reexamination Certificate

active

10716765

ABSTRACT:
A method of forming a coupling dielectric in a memory cell includes forming an oxide on a substrate, forming Ta2O5on the oxide, oxidizing the Ta2O5with rapid thermal process (RTP) at a temperature above the crystallization temperature for Ta2O5, forming a cell nitride on the oxidized Ta2O5, and forming a wetgate oxide on the cell nitride.

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