Split gate type nonvolatile memory device and manufacturing...

Details Split gate type nonvolatile memory device and manufacturing... Split gate type nonvolatile memory device and manufacturing...

2007-01-30

2007-01-30

Booth, Richard A. (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C257SE21179

Reexamination Certificate

active

11323821

ABSTRACT:
A method for fabricating a nonvolatile memory device comprises the steps of: defining an active region in a semiconductor substrate; forming a charge trapping layer, a first conducting layer and a capping layer on the active region; patterning the capping layer to form a pair of caps; forming a first conducting pattern having a width defined by the pair of caps; depositing a second conducting layer on the substrate to cover the first conducting pattern; forming a first photoresist pattern on the second conducting layer, the first photoresist pattern having an opening over a portion of the active region between the pair of caps; selectively etching the second conducting layer using the first photoresist pattern as an etch mask, and at the same time selectively etching the first conducting pattern with the pair of caps as an etch mask, to form a pair of first gates.

REFERENCES:
patent: 6727144 (2004-04-01), Hashimoto
patent: 7034354 (2006-04-01), Lee et al.
patent: 2002/0142545 (2002-10-01), Lin
patent: 2004/0157422 (2004-08-01), Han
patent: 2005/0208744 (2005-09-01), Jeon et al.

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