Method of forming a capacitor in a semiconductor device...

Details Method of forming a capacitor in a semiconductor device... Method of forming a capacitor in a semiconductor device...

2007-09-25

2007-09-25

Tsai, H. Jey (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S396000, C257SE21648

Reexamination Certificate

active

11254261

ABSTRACT:
To form a capacitor in a semiconductor device, an etching barrier layer and a mold insulating layer are sequentially formed on an interlayer insulating film having a contact plug. A hole exposing the contact plug is formed by etching the mold insulating layer and the etching barrier layer. A first blocking layer having a wet etching rate lower than that of the mold insulating layer is formed on the hole sidewall. A storage electrode and a second blocking layer made from the identical material of the first blocking layer are formed on the resultant structure. The predetermined portions of the second blocking layer and the metal layer formed on the mold insulating layer are removed. A cylinder type storage electrode is formed by wet etching the mold insulating layer. A dielectric layer is formed on the cylinder type storage electrode. A plate electrode is formed on the dielectric layer.

REFERENCES:
patent: 6884678 (2005-04-01), Park et al.
patent: 1020030038831 (2003-05-01), None
patent: 1020030067821 (2003-08-01), None
Korean Patent Gazette from Korean Patent Office. Publication date: Jun. 15, 2007.

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