Methods for fabricating thin film transistors

Details Methods for fabricating thin film transistors Methods for fabricating thin film transistors

2007-01-02

2007-01-02

Luu, Chuong Anh (Department: 2818)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S275000, C438S154000, C438S149000

Reexamination Certificate

active

11142930

ABSTRACT:
Fabrication methods for thin film transistors. A metal gate stack structure is formed on an insulating substrate. The substrate is performed using thermal annealing to create an oxide layer on the sidewalls of the metal gate stack structure. A gate insulating layer is formed on the substrate covering the metal gate stack structure. A semiconductor layer is formed on the gate insulating layer. A source/drain layer is formed on the semiconductor.

REFERENCES:
patent: 6165917 (2000-12-01), Batey et al.
patent: 6900464 (2005-05-01), Doi et al.
patent: 6939768 (2005-09-01), Jeng
patent: 2002/0042167 (2002-04-01), Chae

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