Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2007-09-18
2007-09-18
Geyer, Scott B. (Department: 2812)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S275000, C438S283000, C438S294000, C257S368000, C257S411000, C257SE21421
Reexamination Certificate
active
11111451
ABSTRACT:
Mechanical stress control may be achieved using materials having selected elastic moduli. These materials may be selectively formed by implantation, may be provided as a plurality of buried layers interposed between the substrate and the active area, and may be formed by replacing selected portions of one or more buried layers. Any one or more of these methods may be used in combination. Mechanical stress control may be useful in the channel region of a semiconductor device to maximize its performance. In addition, these same techniques and structures may be used for other purposes besides mechanical stress control.
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Adams Vance H.
Orlowski Marius K.
Freescale Semiconductor Inc.
Geyer Scott B.
Hill Susan C.
King Robert L.
Lee Cheung
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