Radiant energy – Irradiation of objects or material – Irradiation of semiconductor devices
Reexamination Certificate
2007-01-09
2007-01-09
Berman, Jack (Department: 2881)
Radiant energy
Irradiation of objects or material
Irradiation of semiconductor devices
C250S492200, C250S492300, C250S398000
Reexamination Certificate
active
11008764
ABSTRACT:
A system, method and program product for enhancing dose uniformity during ion implantation are disclosed. The present invention is directed to allowing the use of an at least partially un-tuned ion beam to obtain a uniform implant by scanning the beam in multiple rotationally-fixed orientations (scan directions) of the target at variable or non-uniform scan velocities. The non-uniform scan velocities are dictated by a scan velocity profile that is generated based on the ion beam profile and/or the scan direction. The beam can be of any size, shape or tuning. A platen holding a wafer is rotated to a new desired rotationally-fixed orientation after a scan, and a subsequent scan occurs at the same scan velocity profile or a different scan velocity profile. This technique may be used independently or in conjunction with other uniformity approaches to achieve the required level of uniformity.
REFERENCES:
patent: 6677599 (2004-01-01), Berrian
patent: 6992309 (2006-01-01), Petry et al.
patent: 2001/0032937 (2001-10-01), Berrian
Lu Jun
Olson Joseph C.
Renau Anthony
Smatlak Donna L.
Berman Jack
Hashmi Zia R.
Varian Semiconductor Equipment Associates Inc.
Varian Semiconductor Equipment Associates, Inc.
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