Methods of forming floating gate transistors

Details Methods of forming floating gate transistors Methods of forming floating gate transistors

2007-03-20

2007-03-20

Estrada, Michelle (Department: 2823)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S258000, C438S261000, C438S593000, C257SE21680

Reexamination Certificate

active

09118359

ABSTRACT:
Floating gate transistors and methods of forming the same are described. In one implementation, a floating gate is formed over a substrate. The floating gate has an inner first portion and an outer second portion. Conductivity enhancing impurity is provided in the inner first portion to a greater concentration than conductivity enhancing impurity in the outer second portion. In another implementation, the floating gate is formed from a first layer of conductively doped semiconductive material and a second layer of substantially undoped semiconductive material. In another implementation, the floating gate is formed from a first material having a first average grain size and a second material having a second average grain size which is larger than the first average grain size.

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