Method for fabricating split gate flash memory device

Details Method for fabricating split gate flash memory device Method for fabricating split gate flash memory device

2007-01-23

2007-01-23

Le, Thao X. (Department: 2814)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S266000, C438S267000

Reexamination Certificate

active

11024478

ABSTRACT:
A method for fabricating a split gate flash memory includes depositing a second conductive layer for forming a control gate on a semiconductor substrate having a first conductive layer, an insulating layer, and an oxide layer on both sides of the first conductive layer formed thereon, filling an anti-implant protective layer in a depression of the second conductive layer, performing ion implant on the second conductive layer, removing the anti-implant protective layer filled in the depression of the second conductive layer, forming a photoresist pattern by depositing a photoresist layer on the second conductive layer for forming a control gate, and treating the photoresist layer with a light exposure and a development process, and forming the control gate by etching the second conductive layer.

REFERENCES:
patent: 6124609 (2000-09-01), Hsieh et al.
patent: 6436764 (2002-08-01), Hsieh
patent: 6958274 (2005-10-01), Jung

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