Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2007-04-17
2007-04-17
Smith, Zandra V. (Department: 2822)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C257S315000, C257S316000, C438S257000
Reexamination Certificate
active
11521162
ABSTRACT:
A bi-directional read/program non-volatile memory cell and array is capable of achieving high density. Each memory cell has two spaced floating gates for storage of charges thereon. The cell has spaced apart source/drain regions with a channel therebetween, with the channel having three portions. One of the floating gate is over a first portion; another floating gate is over a second portion, and a gate electrode controls the conduction of the channel in the third portion between the first and second portions. An independently controllable control gate is insulated from each of the source/drain regions, and is also capacitively coupled to the floating gate. The cell programs by hot channel electron injection, and erases by Fowler-Nordheim tunneling of electrons from the floating gate to the gate electrode. Bi-directional read permits the cell to be programmed to store bits, with one bit in each floating gate. The independently controllable control gates permit an array of such memory cells to operate in a NAND configuration.
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Chen Bomy
Frayer Jack
Kianian Sohrab
DLA Piper (US) LLP
Rose Kiesha
Silicon Storage Technology, Inc.
Smith Zandra V.
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