Methods and apparatus for forming thin films for...

Details Methods and apparatus for forming thin films for... Methods and apparatus for forming thin films for...

2007-09-25

2007-09-25

Lee, Hsien-Ming (Department: 2823)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Insulative material deposited upon semiconductive substrate

C438S785000, C438S787000, C438S791000

Reexamination Certificate

active

11038324

ABSTRACT:
Methods and apparatus are provided for forming thin films for semiconductor devices, which enable supplying and removing reactants containing constituent elements of a thin film to be formed, by preheating and supplying a process gas and a purging gas at a predetermined temperature in forming the thin film on a substrate. For example, a method for forming a thin film includes supplying a first reactant to a chamber to chemically adsorb the first reactant onto a substrate, the first reactant being bubbled by a first gas that is preheated, purging the chamber to remove residues on the substrate having the first reactant chemically adsorbed, and forming the thin film by a means of chemical displacement by supplying a second reactant to the chamber to chemically adsorb the second reactant onto the substrate.

REFERENCES:
patent: 6391785 (2002-05-01), Satta et al.
patent: 6620670 (2003-09-01), Song et al.
patent: 7007933 (2006-03-01), Lee et al.
patent: 2003/0003635 (2003-01-01), Paranjpe et al.
patent: 2005/0012975 (2005-01-01), George et al.

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