Method for fabricating memory components

Details Method for fabricating memory components Method for fabricating memory components

2007-05-15

2007-05-15

Wilczewski, M. (Department: 2822)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S288000, C438S722000, C438S737000, C438S785000, C438S786000

Reexamination Certificate

active

10954157

ABSTRACT:
The top of the semiconductor body (1) has a sacrificial layer (4) made of nitride applied to it on a region, which is provided for the actuation circuit. A memory layer (6) provided for the memory cells is applied over the entire area and is removed above the sacrificial layer (4) by dry etching. The nitride in the sacrificial layer (4) can then be removed by wet chemical means without starting to etch the semiconductor material.

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