Formation of fully silicided metal gate using dual...

Details Formation of fully silicided metal gate using dual... Formation of fully silicided metal gate using dual...

2007-09-18

2007-09-18

Sefer, A. (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S383000, C257S384000, C257S412000, C257S413000, C257S347000, C257SE21203, C257SE21439, C257SE21636, C257SE21640, C257SE29178, C257SE29266

Reexamination Certificate

active

10890753

ABSTRACT:
An advanced gate structure that includes a fully silicided metal gate and silicided source and drain regions in which the fully silicided metal gate has a thickness that is greater than the thickness of the silicided source/drain regions is provided. A method of forming the advanced gate structure is also provided in which the silicided source and drain regions are formed prior to formation of the silicided metal gate region.

REFERENCES:
patent: 6737710 (2004-05-01), Cheng et al.
patent: 6969678 (2005-11-01), Chiu et al.
patent: 2004/0026688 (2004-02-01), Jang et al.
patent: 2005/0079695 (2005-04-01), Carriere et al.
patent: 2005/0156238 (2005-07-01), Wen et al.
patent: 2005/0269635 (2005-12-01), Bojarczuk et al.
patent: 2006/0006476 (2006-01-01), Biery et al.
patent: 1122771 (2001-08-01), None

Affiliated with

Also associated with

Rating

Formation of fully silicided metal gate using dual... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Formation of fully silicided metal gate using dual..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Formation of fully silicided metal gate using dual... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3774737