Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2007-05-29
2007-05-29
Chaudhari, Chandra (Department: 2891)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S791000, C438S938000, C257S369000, C257S288000, C257SE21640
Reexamination Certificate
active
10981925
ABSTRACT:
An integrated advanced method for forming a semiconductor device utilizes a sacrificial stress layer as part of a film stack that enables spatially selective silicide formation in the device. The low-resistance portion of the device to be silicided includes NMOS transistors and PMOS transistors. The stressed film may be a tensile or compressive nitride film. An annealing process is carried out prior to the silicide formation process. During the annealing process, the stressed nitride film preferentially remains over either the NMOS transistors or PMOS transistors, but not both, to optimize device performance. A tensile nitride film remains over the NMOS transistors but not the PMOS transistors while a compressive nitride film remains over the PMOS transistors but not the NMOS transistors, during anneal.
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Chen Chien-Hao
Hsu Ju-Wang
Huang Yi-Chun
Tsai Ming-Huan
Chaudhari Chandra
Duane Morris LLP
Fulk Steven J.
Taiwan Semiconductor Manufacturing Company
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