Method of fabricating trench junction barrier rectifier

Details Method of fabricating trench junction barrier rectifier Method of fabricating trench junction barrier rectifier

2007-03-06

2007-03-06

Ha, Nathan W. (Department: 2814)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C257S510000

Reexamination Certificate

active

10146539

ABSTRACT:
A Schottky rectifier includes a rectifying interface between a semiconductor body and a metal layer. Trenches are formed in the surface of the semiconductor body and regions of a conductivity type opposite to the conductivity type of the body are formed along the sidewalls and bottoms of the trenches, the regions forming PN junctions with the rest of the body. When the rectifier is reverse-biased, the depletion regions along the PN junctions merge to occupy the entire width of the mesas. The device is fabricated by implanting dopant directly through the sidewalls and bottoms of the trenches, by filling the trenches with a material containing dopant and causing the dopant to diffuse through the sidewalls and bottoms of the trenches, or by implanting and diffusing the dopant into a gate filling material.

REFERENCES:
patent: 4819052 (1989-04-01), Hutter
patent: 4982260 (1991-01-01), Chang
patent: 5241195 (1993-08-01), Tu et al.
patent: 5365102 (1994-11-01), Mehrotra
patent: 5488236 (1996-01-01), Baliga
patent: 5631484 (1997-05-01), Tsoi et al.
patent: 5679966 (1997-10-01), Baliga
patent: 5786619 (1998-07-01), Kinzer
patent: 6127226 (2000-10-01), Lin et al.
patent: 6174773 (2001-01-01), Fujishima
patent: 6191447 (2001-02-01), Baliga
patent: 6204097 (2001-03-01), Shen et al.
patent: 6355508 (2002-03-01), Porter et al.
patent: 6583010 (2003-06-01), Mo
patent: 6689662 (2004-02-01), Blanchard
patent: 93202247 (1994-02-01), None
patent: 06151734 (1994-05-01), None

Affiliated with

Also associated with

Rating

Method of fabricating trench junction barrier rectifier does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of fabricating trench junction barrier rectifier, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of fabricating trench junction barrier rectifier will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3772774