Atomic layer deposited HfSiON dielectric films wherein each...

Details Atomic layer deposited HfSiON dielectric films wherein each... Atomic layer deposited HfSiON dielectric films wherein each...

2007-04-03

2007-04-03

Brewster, William M. (Department: 2823)

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Recessed oxide by localized oxidation

C438S589000, C438S763000, C438S785000, C438S786000

Reexamination Certificate

active

10229903

ABSTRACT:
A dielectric film containing atomic layer deposited HfSiON and a method of fabricating such a dielectric film produce a reliable dielectric layer having an equivalent oxide thickness thinner than attainable using SiO2. The HfSiON layer thickness is controlled by repeating for a number of cycles a sequence including pulsing a hafnium containing precursor into a reaction chamber, pulsing an oxygen containing precursor into the reaction chamber, pulsing a silicon containing precursor into the reaction chamber, and pulsing a nitrogen containing precursor until a desired thickness is formed. Dielectric films containing atomic layer deposited HfSiON are thermodynamically stable such that the HfSiON will have minimal reactions with a silicon substrate or other structures during processing.

REFERENCES:
patent: 3381114 (1968-04-01), Nakanuma
patent: 4215156 (1980-07-01), Dalal et al.
patent: 4333808 (1982-06-01), Bhattacharyya et al.
patent: 4399424 (1983-08-01), Rigby
patent: 4413022 (1983-11-01), Suntola et al.
patent: 4590042 (1986-05-01), Drage
patent: 4647947 (1987-03-01), Takeoka et al.
patent: 4767641 (1988-08-01), Kieser et al.
patent: 4920071 (1990-04-01), Thomas
patent: 4993358 (1991-02-01), Mahawili
patent: 5006192 (1991-04-01), Deguchi
patent: 5595606 (1997-01-01), Fujikawa et al.
patent: 5735960 (1998-04-01), Sandhu et al.
patent: 5795808 (1998-08-01), Park
patent: 5801105 (1998-09-01), Yano et al.
patent: 5810923 (1998-09-01), Yano et al.
patent: 5822256 (1998-10-01), Bauer et al.
patent: 5828080 (1998-10-01), Yano et al.
patent: 5840897 (1998-11-01), Kirlin et al.
patent: 5916365 (1999-06-01), Sherman
patent: 5950925 (1999-09-01), Fukunaga et al.
patent: 6010969 (2000-01-01), Vaartstra
patent: 6013553 (2000-01-01), Wallace et al.
patent: 6020024 (2000-02-01), Maiti et al.
patent: 6027961 (2000-02-01), Maiti et al.
patent: 6057271 (2000-05-01), Kenjiro et al.
patent: 6059885 (2000-05-01), Ohashi et al.
patent: 6110529 (2000-08-01), Gardiner et al.
patent: 6161500 (2000-12-01), Kopacz et al.
patent: 6171900 (2001-01-01), Sun
patent: 6200893 (2001-03-01), Sneh
patent: 6203613 (2001-03-01), Gates et al.
patent: 6206972 (2001-03-01), Dunham
patent: 6211035 (2001-04-01), Moise et al.
patent: 6217645 (2001-04-01), Vaartstra
patent: 6225168 (2001-05-01), Gardner et al.
patent: 6225237 (2001-05-01), Vaartstra
patent: 6273951 (2001-08-01), Vaartstra
patent: 6281144 (2001-08-01), Cleary et al.
patent: 6291866 (2001-09-01), Wallace et al.
patent: 6297539 (2001-10-01), Ma et al.
patent: 6300203 (2001-10-01), Buynoski et al.
patent: 6302964 (2001-10-01), Umotoy et al.
patent: 6303481 (2001-10-01), Park
patent: 6313035 (2001-11-01), Sandhu et al.
patent: 6348386 (2002-02-01), Gilmer
patent: 6368941 (2002-04-01), Chen et al.
patent: 6380579 (2002-04-01), Nam et al.
patent: 6387712 (2002-05-01), Yano et al.
patent: 6391769 (2002-05-01), Lee et al.
patent: 6420279 (2002-07-01), Ono et al.
patent: 6432779 (2002-08-01), Hobbs et al.
patent: 6441417 (2002-08-01), Zhang et al.
patent: 6444039 (2002-09-01), Nguyen
patent: 6444592 (2002-09-01), Ballantine et al.
patent: 6445023 (2002-09-01), Vaartstra et al.
patent: 6448192 (2002-09-01), Kaushik
patent: 6451641 (2002-09-01), Halliyal et al.
patent: 6455717 (2002-09-01), Vaartstra
patent: 6458701 (2002-10-01), Chae et al.
patent: 6461970 (2002-10-01), Yin
patent: 6465334 (2002-10-01), Buynoski et al.
patent: 6482740 (2002-11-01), Soininen et al.
patent: 6495436 (2002-12-01), Ahn et al.
patent: 6498063 (2002-12-01), Ping
patent: 6509280 (2003-01-01), Choi
patent: 6514828 (2003-02-01), Ahn et al.
patent: 6521911 (2003-02-01), Parsons et al.
patent: 6527866 (2003-03-01), Matijasevic et al.
patent: 6534357 (2003-03-01), Basceri et al.
patent: 6534420 (2003-03-01), Ahn et al.
patent: 6537613 (2003-03-01), Senzaki et al.
patent: 6544875 (2003-04-01), Wilk
patent: 6551893 (2003-04-01), Zheng et al.
patent: 6586349 (2003-07-01), Jeon et al.
patent: 6596583 (2003-07-01), Agarwal et al.
patent: 6613656 (2003-09-01), Li
patent: 6627503 (2003-09-01), Ma et al.
patent: 6632279 (2003-10-01), Ritala et al.
patent: 6639267 (2003-10-01), Eldridge
patent: 6645882 (2003-11-01), Halliyal et al.
patent: 6660660 (2003-12-01), Haukka et al.
patent: 6670284 (2003-12-01), Yin
patent: 6673701 (2004-01-01), Marsh et al.
patent: 6674138 (2004-01-01), Halliyal et al.
patent: 6696332 (2004-02-01), Visokay et al.
patent: 6709989 (2004-03-01), Ramdani et al.
patent: 6713846 (2004-03-01), Senzaki
patent: 6730575 (2004-05-01), Eldridge
patent: 6750066 (2004-06-01), Cheung et al.
patent: 6767582 (2004-07-01), Elers
patent: 6767795 (2004-07-01), Ahn et al.
patent: 6780704 (2004-08-01), Raaijmakers et al.
patent: 6787413 (2004-09-01), Ahn et al.
patent: 6790791 (2004-09-01), Ahn et al.
patent: 6821873 (2004-11-01), Visokay et al.
patent: 6893984 (2005-05-01), Ahn et al.
patent: 6900122 (2005-05-01), Ahn et al.
patent: 6921702 (2005-07-01), Ahn et al.
patent: 6930346 (2005-08-01), Ahn et al.
patent: 7026694 (2006-04-01), Ahn et al.
patent: 7045430 (2006-05-01), Ahn et al.
patent: 7049192 (2006-05-01), Ahn et al.
patent: 7064058 (2006-06-01), Ahn et al.
patent: 2001/0002280 (2001-05-01), Sneh
patent: 2001/0009695 (2001-07-01), Saanila et al.
patent: 2002/0001971 (2002-01-01), Cho
patent: 2002/0086507 (2002-07-01), Park et al.
patent: 2002/0089023 (2002-07-01), Yu et al.
patent: 2002/0111001 (2002-08-01), Ahn
patent: 2002/0122885 (2002-09-01), Ahn
patent: 2002/0142536 (2002-10-01), Zhang et al.
patent: 2002/0146916 (2002-10-01), Irino et al.
patent: 2002/0155688 (2002-10-01), Ahn et al.
patent: 2002/0155689 (2002-10-01), Ahn et al.
patent: 2002/0177282 (2002-11-01), Song
patent: 2002/0192974 (2002-12-01), Ahn et al.
patent: 2002/0192975 (2002-12-01), Ahn
patent: 2002/0192979 (2002-12-01), Ahn
patent: 2003/0003635 (2003-01-01), Paranjpe et al.
patent: 2003/0017717 (2003-01-01), Ahn et al.
patent: 2003/0048666 (2003-03-01), Eldridge
patent: 2003/0049942 (2003-03-01), Haukka et al.
patent: 2003/0104666 (2003-06-01), Bojarczuk, Jr. et al.
patent: 2003/0181060 (2003-09-01), Asai et al.
patent: 2003/0207032 (2003-11-01), Ahn et al.
patent: 2003/0207540 (2003-11-01), Ahn et al.
patent: 2003/0207593 (2003-11-01), Derderian
patent: 2003/0227033 (2003-12-01), Ahn et al.
patent: 2003/0232511 (2003-12-01), Metzner et al.
patent: 2003/0235961 (2003-12-01), Metzner et al.
patent: 2004/0023461 (2004-02-01), Ahn et al.
patent: 2004/0038554 (2004-02-01), Ahn
patent: 2004/0043635 (2004-03-01), Vaartstra
patent: 2004/0144980 (2004-07-01), Ahn et al.
patent: 2004/0159863 (2004-08-01), Eldridge et al.
patent: 2004/0161899 (2004-08-01), Luo et al.
patent: 2004/0164365 (2004-08-01), Ahn et al.
patent: 2004/0175882 (2004-09-01), Ahn et al.
patent: 2004/0198069 (2004-10-01), Metzner et al.
patent: 2004/0233010 (2004-11-01), Akram et al.
patent: 2004/0262700 (2004-12-01), Ahn et al.
patent: 2005/0009370 (2005-01-01), Ahn
patent: 2005/0020017 (2005-01-01), Ahn et al.
patent: 2005/0023584 (2005-02-01), Derderian et al.
patent: 2005/0023624 (2005-02-01), Ahn et al.
patent: 2005/0023626 (2005-02-01), Ahn et al.
patent: 2005/0026458 (2005-02-01), Basceri et al.
patent: 2005/0029547 (2005-02-01), Ahn et al.
patent: 2005/0077519 (2005-04-01), Ahn et al.
patent: 2005/0087134 (2005-04-01), Ahn
patent: 2005/0124174 (2005-06-01), Ahn et al.
patent: 2005/0138262 (2005-06-01), Forbes
patent: 2005/0140462 (2005-06-01), Ajram et al.
patent: 2005/0145957 (2005-07-01), Ahn et al.
patent: 2005/0158973 (2005-07-01), Ahn et al.
patent: 2005/0164521 (2005-07-01), Ahn et al.
patent: 2005/0227442 (2005-10-01), Ahn et al.
patent: 2005/0277256 (2005-12-01), Ahn et al.
patent: 2005/0280067 (2005-12-01), Ahn et al.
patent: 2006/0000412 (2006-01-01), Ahn et al.
patent: 2006/0001151 (2006-01-01), Ahn et al.
patent: 2006/0003517 (2006-01-01), Ahn et al.
patent: 1096042 (2001-05-01), None
patent: 1124262 (2001-08-01), None
patent: 62-199019 (1987-09-01), None
patent: 5090169 (1993-04-01), None
patent: 2001-332546 (2001-11-01), None
patent: WO-01/97257 (2001-12-01), None
patent: WO-02/31875 (2002-04-01), None
Shanware et al., “Reliab

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