Semiconductor device and method for forming same using...

Details Semiconductor device and method for forming same using... Semiconductor device and method for forming same using...

2007-01-23

2007-01-23

Lebentritt, Michael (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C257SE27016

Reexamination Certificate

active

10774081

ABSTRACT:
According to some embodiments of the invention, bit lines are formed using a multi-layered hard mask and BC nodes are separated by forming line-type BCs in the same direction of gate lines. Thus, a narrowing of shoulders between the bit lines and the BCs can be prevented, and spacers can be formed of a low k-dielectric silicon oxide, thereby lowering parasitic capacitance.

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patent: 2002-0046778 (2002-06-01), None
patent: 2004-0061856 (2004-07-01), None
English language abstract of Korean Publication No. 2002-0046778.
English language abstract of Korean Publication No. 2004-0061856.

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