Method of forming capacitor of semiconductor device

Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate

Reexamination Certificate

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C257SE21008

Type

Reexamination Certificate

Status

active

Patent number

10999568

Description

ABSTRACT:
Disclosed is a method of forming a capacitor of a semiconductor device which can secure a desired leakage current characteristic while securing a desired charging capacitance. The inventive method of forming a capacitor of a semiconductor device comprises steps of: forming a bottom electrode on a semiconductor substrate with a storage node contact so that the bottom electrode is connected with the storage node contact; plasma-nitrifying the bottom electrode to form a first nitrification film on the surface of the bottom electrode; forming a LaTbO dielectric film on the bottom electrode including the first nitrification film; plasma-nitrifying the LaTbO dielectric film to form a second nitrification film on the surface of the LaTbO dielectric film; and forming a top electrode on the LaTbO dielectric film including the second nitrification film.

REFERENCES:
patent: 04202012 (1992-07-01), None
patent: 07017763 (1995-01-01), None

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