Method of manufacturing ferroelectric film capacitor

Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate

Reexamination Certificate

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C438S240000, C438S253000, C438S393000, C438S396000, C438S686000, C438S942000

Reexamination Certificate

active

10996063

ABSTRACT:
A method of manufacturing a ferroelectric film capacitor includes forming a platinum film used as an electrode material over a whole surface of a silicon substrate, batch-etching the platinum film to form opposite electrodes that serve as a pair of capacitor electrodes, and embedding a ferroelectric film corresponding to a dielectric film of the capacitor into a portion interposed between the pair of opposite electrodes.

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