Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2007-03-27
2007-03-27
Fourson, George R. (Department: 2823)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S240000, C438S253000, C438S393000, C438S396000, C438S686000, C438S942000
Reexamination Certificate
active
10996063
ABSTRACT:
A method of manufacturing a ferroelectric film capacitor includes forming a platinum film used as an electrode material over a whole surface of a silicon substrate, batch-etching the platinum film to form opposite electrodes that serve as a pair of capacitor electrodes, and embedding a ferroelectric film corresponding to a dielectric film of the capacitor into a portion interposed between the pair of opposite electrodes.
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Fourson George R.
García Joannie Adelle
Oki Electric Industry Co. Ltd.
Volentine & Whitt P.L.L.C.
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