Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2007-01-09
2007-01-09
Vu, David (Department: 2818)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C257S315000
Reexamination Certificate
active
10916670
ABSTRACT:
Embodiments of the invention include a gate insulating layer formed on a semiconductor substrate; a spacer-type floating gate and a spacer-type dummy pattern, which are formed on the gate insulating layer and separated apart from each other, the floating gate and the dummy pattern having round surfaces that face outward; a pair of insulating spacers, which are formed on a sidewall of the floating gate and a sidewall of the dummy pattern which face each other; a control gate formed in a self-aligned manner between the pair of insulating spacers; a tunnel insulating layer interposed between the floating gate and the control gate; and source and drain regions formed in the semiconductor substrate outside the floating gate and the dummy pattern.
REFERENCES:
patent: 6773993 (2004-08-01), Lin et al.
Choi Yong-Suk
Yoon Seung-Beom
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