Methods of forming pluralities of capacitors

Details Methods of forming pluralities of capacitors Methods of forming pluralities of capacitors

2007-04-03

2007-04-03

Lee, Hsien-Ming (Department: 2823)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S253000, C438S387000, C438S396000

Reexamination Certificate

active

11196593

ABSTRACT:
The invention comprises methods of forming pluralities of capacitors. In one implementation, metal is formed over individual capacitor storage node locations on a substrate. A patterned masking layer is formed over the metal. The patterned masking layer comprises openings therethrough to an outer surface of the metal. Individual of the openings are received over individual of the capacitor storage node locations. A pit is formed in the metal outer surface within individual of the openings. After forming the pits, the metal is anodically oxidized through the openings effective to form a single metal oxide-lined channel in individual of the openings over the individual capacitor storage nodes. Individual capacitor electrodes are formed within the channels in electrical connection with the individual capacitor storage node locations. At least some of the metal oxide is removed from the substrate, and the individual capacitor electrodes are incorporated into a plurality of capacitors. Other aspects and implementations are contemplated.

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