Photosensitive polymer including fluorine and resist...

Radiation imagery chemistry: process – composition – or product th – Imaging affecting physical property of radiation sensitive... – Radiation sensitive composition or product or process of making

Reexamination Certificate

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C430S907000, C430S325000, C430S326000, C430S311000, C430S327000, C430S330000, C430S921000, C430S925000, C526S242000, C526S247000

Reexamination Certificate

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10423945

ABSTRACT:
Disclosed is a photosensitive polymer comprising pentafluoromethylvinyl ether derivative monomer having the formula:wherein R may be an alkoxy carbonyl, alkylsilane, a fluorine-substituted or unsubstituted C3–C20alkyl carbonyl, a fluorine-substituted or unsubstituted C3–C20cycloalkylcarbonyl or a fluorine-substituted or unsubstituted benzoyl substituent group. The photosensitive polymer is the polymerization product of the pentafluoromethylvinyl ether derivative monomer and at least one additional monomer selected from the group consisting of (meth)acrylic acid, (meth)acrylate, styrene, norbornene, tetrafluoroethylene and maleic anhydride monomers. The photosensitive polymer may be used in photoresist compositions for exposure light sources having a predominant wavelength of less than 157 nm.

REFERENCES:
patent: 6461789 (2002-10-01), Hatakeyama et al.
patent: 6723488 (2004-04-01), Kudo et al.
Song et al, “Fluorocarbon Based Single-layer Resist for 157 nm Lithography”, Proceedings of SPIE, vol. 4690 (Mar. 2002), p. 504-511.

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