PECVD nitride film

Details PECVD nitride film PECVD nitride film

2007-03-20

2007-03-20

Nhu, David (Department: 2818)

Semiconductor device manufacturing: process

Introduction of conductivity modifying dopant into...

Plasma

C438S197000, C438S680000, C257SE21170, C257SE21293

Reexamination Certificate

active

11106970

ABSTRACT:
A method for forming a semiconductor device is provided. In accordance with the method, a substrate (103) is provided, and a dielectric material (123) is formed on the substrate through plasma enhanced chemical vapor deposition (PECVD). The PECVD is conducted at a temperature of greater than 300° C., and utilizes an atmosphere comprising nitrogen, silane, ammonia, and helium.

REFERENCES:
patent: 5831283 (1998-11-01), Batey et al.
patent: 6174810 (2001-01-01), Islam et al.
patent: 6255217 (2001-07-01), Agnello et al.
patent: 6444542 (2002-09-01), Moise et al.
patent: 6492267 (2002-12-01), Yin et al.
patent: 6504235 (2003-01-01), Schmitz et al.

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