Method of fabricating split gate flash memory device

Details Method of fabricating split gate flash memory device Method of fabricating split gate flash memory device

2007-04-24

2007-04-24

Nhu, David (Department: 2818)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S258000, C257SE21680, C257SE21645, C257SE29129

Reexamination Certificate

active

11024745

ABSTRACT:
A method of fabricating a split gate flash memory device by which stringer generation is prevented. The method includes forming a dielectric layer on an active area of a semiconductor substrate, forming a first gate covered with a cap layer on the dielectric layer, and forming an insulating layer on a sidewall of the first gate. The method also includes forming a dummy spacer over the sidewall of the first gate, the first gate including the cap layer and the insulating layer, and removing the dielectric layer failing to be covered with the dummy spacer and the dummy spacer to form an exposed portion of the substrate. The method further includes forming a gate insulating layer on the exposed portion of the substrate, and forming a second gate overlapping one side of the first gate, wherein a split gate is configured with the first and second gates.

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