Sealing sidewall pores in low-k dielectrics

Details Sealing sidewall pores in low-k dielectrics Sealing sidewall pores in low-k dielectrics

2007-04-24

2007-04-24

Estrada, Michelle (Department: 2823)

Semiconductor device manufacturing: process

Chemical etching

Combined with coating step

C438S627000, C438S628000, C438S637000, C438S643000, C438S644000, C257SE23116, C257SE21579

Reexamination Certificate

active

10728774

ABSTRACT:
Barrier metal layer discontinuities or gaps due to low-k dielectric porosity is reduced by sealing sidewall porosity before barrier metal layer deposition. Embodiments include sealing sidewall porosity by depositing a swelling agent, adhesion promoter or an additional layer of low-k material.

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