Semiconductor devices and methods for forming the same...

Details Semiconductor devices and methods for forming the same... Semiconductor devices and methods for forming the same...

2007-01-30

2007-01-30

Lebentritt, Michael (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S303000, C438S305000, C438S525000, C257SE21438, C257SE21507, C257SE21626

Reexamination Certificate

active

11135711

ABSTRACT:
Semiconductors having electrically coupled gate and impurity doped regions and methods for fabricating the same are provided. A method in accordance with an embodiment of the invention comprises forming a gate electrode overlying a substrate and an impurity doped region within the substrate. A first spacer is formed on a first side and a second spacer on a second side of the gate electrode. An ion is implanted into the first spacer with an angle greater than zero from an axis perpendicular to the surface of the substrate. The first spacer is etched to remove a portion thereof and a silicon film is deposited overlying a remainder of the first spacer, the impurity doped region and the second spacer. The silicon film is etched, forming a silicon spacer, and a silicide-forming metal is deposited to form a silicide contact that electrically couples the gate electrode and the impurity doped region.

REFERENCES:
patent: 5880022 (1999-03-01), Lee et al.
patent: 6194276 (2001-02-01), Chan et al.
patent: 6207519 (2001-03-01), Kim et al.
patent: 6248627 (2001-06-01), Pham et al.
patent: 6251762 (2001-06-01), Jan et al.
patent: 6806126 (2004-10-01), Luning et al.
patent: 6815300 (2004-11-01), Jeong et al.
patent: 2002/0025644 (2002-02-01), Cho et al.
patent: 2005/0020022 (2005-01-01), Grudowski

Affiliated with

Also associated with

Rating

Semiconductor devices and methods for forming the same... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor devices and methods for forming the same..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor devices and methods for forming the same... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3747938