Sacrificial layer for protection during trench etch

Details Sacrificial layer for protection during trench etch Sacrificial layer for protection during trench etch

2007-04-17

2007-04-17

Sarkar, Asok K. (Department: 2891)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S687000, C438S627000, C438S700000, C438S710000, C257SE21017

Reexamination Certificate

active

11138848

ABSTRACT:
A method for etching a trench is provided. The method initiates with providing a substrate having a patterned feature. The method includes alternating between deposition of a protective layer onto inner surfaces of the patterned feature and etching the trench into the substrate. The alternating may be achieved through a gas modulation technique and in one embodiment, the deposition and the etching are performed in the same chamber, i.e., the substrate does not move to a different chamber between the etch and deposition processes. The alternating is continued until the trench is completed and then the trench is filled. A semiconductor processing system is also provided.

REFERENCES:
patent: 2002/0096727 (2002-07-01), Fischer et al.
patent: 2003/0216036 (2003-11-01), Ma
patent: 2005/0191806 (2005-09-01), Gutsche et al.

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