Semiconductor device and method of fabricating the same

Details Semiconductor device and method of fabricating the same Semiconductor device and method of fabricating the same

2007-09-18

2007-09-18

Nguyen, Tuan H. (Department: 2813)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S275000

Reexamination Certificate

active

11048845

ABSTRACT:
A method of fabricating a semiconductor device having a non-volatile memory cell includes forming an insulation layer as an uppermost/outermost portion of the memory cell to enhance the charge retention capability of the memory cell. The insulation layer is formed after the gate structure and integrate dielectric of the non-volatile memory cell, and a gate of a logic transistor are formed. The insulation layer thus enhances the function of the intergrate dielectric. Subsequently, a conductive layer is formed on the substrate including over the gate of the logic transistor. A silicide layer is then formed on the gate of the logic transistor and on the substrate adjacent opposite sides of the gate. The insulation layer thus also serves prevent the formation of a silicide layer on the non-volatile memory cell.

REFERENCES:
patent: 5998252 (1999-12-01), Huang
patent: 6037222 (2000-03-01), Huang et al.
patent: 6274411 (2001-08-01), Patelmo et al.
patent: 2004/0092070 (2004-05-01), Hsu et al.
patent: 2004/0180487 (2004-09-01), Eppich et al.
patent: 1020000023619 (2000-04-01), None
patent: 2003-0063943 (2003-07-01), None

Affiliated with

Also associated with

Rating

Semiconductor device and method of fabricating the same does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device and method of fabricating the same, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device and method of fabricating the same will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3742781