Manufacturing method of semiconductor device

Details Manufacturing method of semiconductor device Manufacturing method of semiconductor device

2007-07-10

2007-07-10

Huynh, Andy (Department: 2818)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S377000

Reexamination Certificate

active

11092554

ABSTRACT:
A manufacturing method of a semiconductor device having a semiconductor memory including a plurality of nonvolatile memory elements, comprising a step of forming a mask on the semiconductor memory and a step of irradiating through the mask with electron beams, the mask having transmission parts on one or more nonvolatile memory elements selected from the plurality of nonvolatile memory elements and a blocking part in which the electron beam is blocked, thereby said one or more nonvolatile memory elements are irradiated with electron beams without requiring an additional process.

REFERENCES:
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patent: 2003/0207521 (2003-11-01), Tanaka et al.
patent: 57-066675 (1982-04-01), None
patent: 2-139967 (1990-05-01), None
patent: 6-053444 (1994-02-01), None

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