Resist for electron beam lithography and a process for...

Radiation imagery chemistry: process – composition – or product th – Imaging affecting physical property of radiation sensitive... – Radiation sensitive composition or product or process of making

Reexamination Certificate

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C430S005000, C430S296000, C430S286100, C430S942000

Reexamination Certificate

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10376904

ABSTRACT:
The invention relates to a resist for electron beam lithography and to a process for producing photomasks for optical lithography. The inventive resist includes repeating units that are derived from maleic anhydride and that can act as an anchor group for the subsequent binding of silicon-containing groups. The etch stability of the resist can thus be subsequently increased so that there is no dimensional loss on transfer of the resist structure to a chromium layer arranged under the resist.

REFERENCES:
patent: 3914462 (1975-10-01), Morishita
patent: 5234793 (1993-08-01), Sebald et al.
patent: 5234794 (1993-08-01), Sebald et al.
patent: 5939574 (1999-08-01), Schilling et al.
patent: 6280908 (2001-08-01), Aviram et al.
patent: 6296984 (2001-10-01), Gabor et al.
patent: 6358670 (2002-03-01), Wong et al.
patent: 6387573 (2002-05-01), Park et al.
patent: 6482558 (2002-11-01), Singh et al.
patent: RE37996 (2003-02-01), Mizuno et al.
patent: 6562555 (2003-05-01), Fiebag et al.
patent: 6660455 (2003-12-01), Itoh et al.
patent: 6703171 (2004-03-01), Hattori et al.
patent: 6753129 (2004-06-01), Livesay et al.
patent: 6770423 (2004-08-01), Rottstegge et al.
patent: 6800407 (2004-10-01), Czech et al.
patent: 2003/0165751 (2003-09-01), Elian et al.
patent: 2004/0043330 (2004-03-01), Rottstegge et al.
patent: 22 27 008 (1972-12-01), None
patent: 102 08 448 (2003-09-01), None
patent: 0395 917 (1990-11-01), None

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