Method of manufacturing a ferroelectric capacitor having...

Details Method of manufacturing a ferroelectric capacitor having... Method of manufacturing a ferroelectric capacitor having...

2007-09-18

2007-09-18

Smith, Zandra V. (Department: 2822)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S003000, C438S239000, C438S243000, C438S250000, C438S253000, C438S386000, C438S393000, C438S396000

Reexamination Certificate

active

11055177

ABSTRACT:
A ferroelectric capacitor has the property that polarization of a ferroelectric thin film can readily be reversed and polarization-reversal charge increased. The ferroelectric capacitor has a bottom electrode, a ferroelectric thin film and a top electrode. The top electrode includes a metal crystalline phase and 0.5 to 5 atm % interstitial oxygen atoms in the metal crystalline phase.

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patent: 2003/0133250 (2003-07-01), Norga et al.
patent: 97-8614 (1997-02-01), None

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