Method for depositing a metal layer on a semiconductor...

Details Method for depositing a metal layer on a semiconductor... Method for depositing a metal layer on a semiconductor...

2007-07-10

2007-07-10

Schillinger, Laura M. (Department: 2813)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C438S687000

Reexamination Certificate

active

10318606

ABSTRACT:
Disclosed is a method for depositing a metal layer on an interconnect structure for a semiconductor wafer. In the method, a metal conductor is covered by a capping layer and a dielectric layer. The dielectric layer is patterned so as to expose the capping layer. The capping layer is then sputter etched to remove the capping layer and expose the metal conductor. In the process of sputter etching, the capping layer is redeposited onto the sidewall of the pattern. Lastly, at least one layer is deposited into the pattern and covers the redeposited capping layer.

REFERENCES:
patent: 3856648 (1974-12-01), Fuller et al.
patent: 4523372 (1985-06-01), Balda et al.
patent: 5620925 (1997-04-01), Nakata et al.
patent: 6110843 (2000-08-01), Chien et al.
patent: 6177350 (2001-01-01), Sundarrajan et al.
patent: 6191029 (2001-02-01), Hsiao et al.
patent: 6200890 (2001-03-01), Chen
patent: 6214731 (2001-04-01), Nogami et al.
patent: 6287977 (2001-09-01), Hashim et al.
patent: 6350687 (2002-02-01), Avanzino et al.
patent: 6429121 (2002-08-01), Hopper et al.
patent: 6429128 (2002-08-01), Besser et al.
patent: 6454919 (2002-09-01), Sundarrajan et al.
patent: 6465889 (2002-10-01), Subramanian et al.
patent: 6509267 (2003-01-01), Woo et al.
patent: 6555461 (2003-04-01), Woo et al.
patent: 6559061 (2003-05-01), Hashim et al.
patent: 6562416 (2003-05-01), Ngo et al.
patent: 6607977 (2003-08-01), Rozbicki et al.
patent: 6642146 (2003-11-01), Rozbicki et al.
patent: 6657304 (2003-12-01), Woo et al.
patent: 2002/0068461 (2002-06-01), Kwon
patent: 07249609 (1995-09-01), None

Affiliated with

Also associated with

Rating

Method for depositing a metal layer on a semiconductor... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for depositing a metal layer on a semiconductor..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for depositing a metal layer on a semiconductor... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3733430