Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2007-03-13
2007-03-13
Lindsay, Jr., Walter (Department: 2812)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C257S302000, C257SE21149, C257SE21147
Reexamination Certificate
active
11123192
ABSTRACT:
It is an object to obtain a semiconductor device comprising a channel stop structure which is excellent in an effect of stabilizing a breakdown voltage and a method of manufacturing the semiconductor device. A silicon oxide film (2) is formed on an upper surface of an N−-type silicon substrate (1). An N+-type impurity implantation region (4) is formed in an upper surface (3) of the N−-type silicon substrate (1) in a portion exposed from the silicon oxide film (2). A deeper trench (5) than the N+-type impurity implantation region (4) is formed in the upper surface (3) of the N−-type silicon substrate (1). A silicon oxide film (6) is formed on an inner wall of the trench (5). A polysilicon film (7) is formed to fill in the trench (5). An aluminum electrode (8) is formed on the upper surface (3) of the N−-type silicon substrate (1). The aluminum electrode (8) is provided in contact with an upper surface of the polysilicon film (7) and the upper surface (3) of the N−-type silicon substrate (1). The aluminum electrode (8) is extended over the silicon oxide film (2) to constitute a field plate.
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Aono Shinji
Takahashi Hideki
Dinh Thu-Huong
Lindsay, Jr. Walter
Mitsubishi Denki & Kabushiki Kaisha
Oblon & Spivak, McClelland, Maier & Neustadt P.C.
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