Process and structure to fabricate spin valve heads for...

Details Process and structure to fabricate spin valve heads for... Process and structure to fabricate spin valve heads for...

2007-04-10

2007-04-10

McDonald, Rodney G. (Department: 1753)

Chemistry: electrical and wave energy

Processes and products

Coating, forming or etching by sputtering

C204S192120, C360S324000, C360S324100, C360S328000, C360S313000

Reexamination Certificate

active

10661038

ABSTRACT:
A method for forming a bottom spin-valve GMR sensor having ultra-thin layers of high density and smoothness and possessing oxygen surfactant layers as a result of the layers being sputtered in a mixture of Ar and O2. A particularly novel feature of the method is the use of a sputtering chamber with an ultra-low base pressure and correspondingly ultra-low pressure mixtures of Ar and O2sputtering gas (<0.5 millitorr) in which the admixed oxygen has a partial pressure of less than 5×10−9torr.

REFERENCES:
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patent: 6414825 (2002-07-01), Inoue et al.
patent: 6567246 (2003-05-01), Sakakima et al.
patent: 2002/0041473 (2002-04-01), Hoshiya et al.
patent: 2003/0021071 (2003-01-01), Kula et al.
“40% Tunneling Magnetoresistance After Anncol at 380° C. for Tunnel Junctions with Iron-Oxide Interface Layers”, by Shang et al., Jrnl. of Appl. Physics, vol. 89, No. 11, Jun. 1, 2001, pp. 6665-6667.
“Oxygen as a Surfactant in the Growth of Giant Magneto-resistance Spin Valves”, by W.F. Egelhoff, Jr. et al., Jrnl. of Appl. Physics, vol. 82, No. 12, Dec. 15, 1997, pp. 6142-6151.

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