4. Dynamic magnetic information storage or retrieval
  5. Head
  6. Magnetoresistive reproducing head

Ru-Ying Tong

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Anisotropic magnetoresistive (MR) sensor element with...

Dynamic magnetic information storage or retrieval – Head – Magnetoresistive reproducing head
Reexamination Certificate

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Bottom electrode for making a magnetic tunneling junction (MTJ)

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate

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Bottom electrode for MRAM device and method to fabricate it

Semiconductor device manufacturing: process – Chemical etching – Vapor phase etching
Reexamination Certificate

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Bottom spin valve sensor having a lead overlay (LOL)...

Dynamic magnetic information storage or retrieval – Head – Magnetoresistive reproducing head
Reexamination Certificate

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Bottom spin valve with laminated CoFe free layer for...

Dynamic magnetic information storage or retrieval – Head – Magnetoresistive reproducing head
Reexamination Certificate

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Profile ID: LFUS-PAI-P-2066722

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