Silicon precursors for deep trench silicon etch processes

Details Silicon precursors for deep trench silicon etch processes Silicon precursors for deep trench silicon etch processes

2007-03-06

2007-03-06

Norton, Nadine G. (Department: 1765)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C438S712000, C438S719000

Reexamination Certificate

active

10338964

ABSTRACT:
The present invention relates to etch chemistry and methods for the etching of silicon substrates. The method is particularly useful for deep trench etching of silicon substrates and produces a trench having a high aspect ratio. In this type of deep trench etching, control of the profile of the trench is addressed by the etch chemistry disclosed herein. The etchant described in the present invention comprises silicon and a halogen component, and may be gaseous, liquid or solid. The etchant disclosed is also substantially free of hydrogen and carbon.

REFERENCES:
patent: 6318384 (2001-11-01), Khan et al.
patent: 6380095 (2002-04-01), Liu et al.
patent: 2002/0003126 (2002-01-01), Kumar et al.
International Critical Tables of Numerical Data, Physics, Chemistry and Technology (via www.knovel.com), 1stElectronic Edition; Search query: Si2Br6, SiSBr2 or SiSCl2.

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