Method for fabricating microchips using metal oxide masks

Details Method for fabricating microchips using metal oxide masks Method for fabricating microchips using metal oxide masks

2007-09-11

2007-09-11

Lebentritt, Michael (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S241000, C438S243000, C438S249000, C438S653000, C438S687000, C257SE21141

Reexamination Certificate

active

11040091

ABSTRACT:
A process for modifying sections of a semiconductor includes covering the sections to remain free of doping with a metal oxide, e.g., aluminum oxide. Then, the semiconductor is doped, for example, from the gas phase, in those sections that are not covered by the aluminum oxide. Finally, the aluminum oxide is selectively removed again, for example using hot phosphoric acid. Sections of the semiconductor surface which are formed from silicon, silicon oxide or silicon nitride remain in place on the wafer.

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