Semiconductor device having box-shaped cylindrical storage...

Details Semiconductor device having box-shaped cylindrical storage... Semiconductor device having box-shaped cylindrical storage...

2007-09-25

2007-09-25

Luu, Chuong Anh (Department: 2818)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S244000, C438S396000, C438S445000

Reexamination Certificate

active

11137440

ABSTRACT:
A method of forming box-shaped cylindrical storage nodes includes forming an interlayer insulating layer on a semiconductor substrate. Buried contact plugs are formed to penetrate the interlayer insulating layer. A molding layer and a photoresist layer are then sequentially formed on the substrate. Using a first phase shift mask having line-and-space patterns, the photoresist layer is exposed, forming first exposure regions. Using a second phase shift mask having line-and-space patterns, the photoresist layer is exposed again, forming second exposure regions intersecting the first exposure regions. The photoresist layer is then developed, forming a photoresist pattern having rectangular-shaped openings formed at intersections of the first and the second exposure regions. The molding layer is etched using the photoresist pattern as an etch mask, forming storage node holes exposing the buried contact plugs. Storage nodes are formed inside the storage node holes.

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