Thyristor-based semiconductor memory device and its method...

Details Thyristor-based semiconductor memory device and its method... Thyristor-based semiconductor memory device and its method...

2007-01-02

2007-01-02

Dang, Phuc T. (Department: 2818)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S197000, C257S107000

Reexamination Certificate

active

11026400

ABSTRACT:
A thyristor-based memory device may comprise a commonly-implanted base region, in which a common emitter region may be implanted for the left and the right thyristors in a mirror-image pair. The implanting of the base region may include directing the dopant toward a semiconductor material through a window defined by sidewalls formed in a conditioned masking material over the semiconductor material. The resulting base and emitter regions may be substantially symmetrical about a central boundary plane. In relation to the symmetry, one thyristor may be operable with a minimum holding current within about 10 percent of that for the other thyristor in the mirror-image pair.

REFERENCES:
patent: 5541121 (1996-07-01), Johnson
patent: 6888176 (2005-05-01), Horch et al.
Chih Hsin Wang and Jan Van Der Velden, A Single-Poly BiCMOS Technology with 30 GHz Bipolar FT; 1994 Bipolar/BiCMOS Circuits & Technology Meeting; 1994 IEEE; pp. 234-237.

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