Processing method for annealing and doping a semiconductor

Details Processing method for annealing and doping a semiconductor Processing method for annealing and doping a semiconductor

2007-07-10

2007-07-10

Dang, Phuc T. (Department: 2818)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

By reaction with substrate

C438S149000, C257S452000

Reexamination Certificate

active

11058344

ABSTRACT:
A treatment method of annealing and doping a semiconductor including irradiating a semiconductor layer (13) formed on a substrate (11) with a laser beam (a), thereby melting at least a part of the semiconductor layer; irradiating a target material (2) including atoms with which the semiconductor layer is to be doped with the laser beam (a′), thereby ablating the atoms of the target material; and doping the melted semiconductor layer with the ablated atoms.

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patent: 2002-122881 (2002-04-01), None

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